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  • Carbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.
  • Carbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed. (en)
Title
  • SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE
  • SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE (en)
skos:prefLabel
  • SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE
  • SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE (en)
skos:notation
  • RIV/00216224:14310/10:00040639!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/08/0178), P(GAP205/10/1374), P(GD104/09/H080), P(KAN311610701), S, V, Z(MSM0021622411)
http://linked.open...iv/cisloPeriodika
  • 5
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 291519
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/10:00040639
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • carbon nanostructures; plasma enhanced chemical vapour deposition; atmospheric pressure (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • SK - Slovenská republika
http://linked.open...ontrolniKodProRIV
  • [162EAB63F628]
http://linked.open...i/riv/nazevZdroje
  • Journal of Electrical Engineering
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 61
http://linked.open...iv/tvurceVysledku
  • Eliáš, Marek
  • Jašek, Ondřej
  • Kudrle, Vít
  • Zajíčková, Lenka
  • Synek, Petr
http://linked.open...n/vavai/riv/zamer
issn
  • 1335-3632
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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