About: X-ray diffraction on precipitates in Czochralski-grown silicon

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The results of a study of oxygen precipitates in Czochralski grown silicon are reported. High-resolution X-ray diffraction was used to measure reciprocal space maps on samples after various annealing treatment. The measurements were performed for several diffraction orders and systematic differences between reciprocal space maps around different diffractions were found. The diffuse X-ray scattering intensity was simulated, where the displacement field of precipitates was calculated using continuum elasticity theory. The simulations give correct asymptotic behavior and the interpretation of intermediate region between Huang and core scattering processes is found. The X-ray diffraction results are correlated to the infrared absorption spectroscopy measurement involving the interstitial oxygen concentration. The results of a study of oxygen precipitates in Czochralski grown silicon are reported. High-resolution X-ray diffraction was used to measure reciprocal space maps on samples after various annealing treatment. The measurements were performed for several diffraction orders and systematic differences between reciprocal space maps around different diffractions were found. The diffuse X-ray scattering intensity was simulated, where the displacement field of precipitates was calculated using continuum elasticity theory. The simulations give correct asymptotic behavior and the interpretation of intermediate region between Huang and core scattering processes is found. The X-ray diffraction results are correlated to the infrared absorption spectroscopy measurement involving the interstitial oxygen concentration. (en)
Title	X-ray diffraction on precipitates in Czochralski-grown silicon X-ray diffraction on precipitates in Czochralski-grown silicon (en)
skos:prefLabel	X-ray diffraction on precipitates in Czochralski-grown silicon X-ray diffraction on precipitates in Czochralski-grown silicon (en)
skos:notation	RIV/00216224:14310/09:00029726!RIV10-MSM-14310___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/1013), P(GP202/09/P410), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	23-24
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Caha, Ondřej Meduňa, Mojmír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	352136
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/09:00029726
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon; X-ray diffraction; Precipitates (en)
http://linked.open.../riv/klicoveSlovo	Silicon X-ray diffraction Precipitates
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[92A6E7251435]
http://linked.open...i/riv/nazevZdroje	Physica B condensed matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Strain engineering in diluted magnetic semiconductors Nucleation and growth of oxygen precipitates in silicon
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	404
http://linked.open...iv/tvurceVysledku	Caha, Ondřej Meduňa, Mojmír
http://linked.open...n/vavai/riv/zamer	Physical and chemical properties of advanced materials and structures
issn	0921-4526
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	14310
is http://linked.open...avai/riv/vysledek of	X-ray diffraction on precipitates in Czochralski-grown silicon X-ray diffraction on precipitates in Czochralski-grown silicon X-ray diffraction on precipitates in Czochralski-grown silicon X-ray diffraction on precipitates in Czochralski-grown silicon

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