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  • We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.
  • We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity. (en)
Title
  • Optical characteristics and UV modification of low-k materials
  • Optical characteristics and UV modification of low-k materials (en)
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  • Optical characteristics and UV modification of low-k materials
  • Optical characteristics and UV modification of low-k materials (en)
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  • RIV/00216224:14310/08:00027845!RIV10-MSM-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021622410)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 384985
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/08:00027845
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • low-k; ellipsometry; UV-cure (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [4EE5714BCE08]
http://linked.open...v/mistoKonaniAkce
  • Beijing
http://linked.open...i/riv/mistoVydani
  • Beijing
http://linked.open...i/riv/nazevZdroje
  • 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008.
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Maršík, Přemysl
  • Baklanov, Mikhail
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000265971001036
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • IEEE
https://schema.org/isbn
  • 978-1-4244-2185-5
http://localhost/t...ganizacniJednotka
  • 14310
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