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  • We have used infrared absorption to study interstitial oxygen and oxygen precipitates in a series of nitrogen-doped silicon (Si:N) samples. Transmittance spectra have been measured in the temperature range from 10 to 300 K. This allowed us to separate reliably the contributions of interstitial oxygen (Oi) and oxygen precipitates, obtained in the single-step (16 h at 1050C) and two-step (4 h at 750C, followed by 16 h at 1050C) heat treatment. In the data analysis, we focus on the amount of oxygen available initially in the unannealed material, and its redistribution following the two thermal treatments. The absorption spectra of the precipitates are analysed using effective-medium models; we have used infrared ellipsometric spectra of amorphous silicon dioxide, optimized for the range of weak absorption at high frequencies, and their modifications for different stoichiometries.
  • We have used infrared absorption to study interstitial oxygen and oxygen precipitates in a series of nitrogen-doped silicon (Si:N) samples. Transmittance spectra have been measured in the temperature range from 10 to 300 K. This allowed us to separate reliably the contributions of interstitial oxygen (Oi) and oxygen precipitates, obtained in the single-step (16 h at 1050C) and two-step (4 h at 750C, followed by 16 h at 1050C) heat treatment. In the data analysis, we focus on the amount of oxygen available initially in the unannealed material, and its redistribution following the two thermal treatments. The absorption spectra of the precipitates are analysed using effective-medium models; we have used infrared ellipsometric spectra of amorphous silicon dioxide, optimized for the range of weak absorption at high frequencies, and their modifications for different stoichiometries. (en)
Title
  • Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon
  • Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon (en)
skos:prefLabel
  • Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon
  • Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon (en)
skos:notation
  • RIV/00216224:14310/06:00016777!RIV10-MSM-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 479697
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/06:00016777
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Silicon; Interstitial oxygen; Precipitate; Nitrogen doping (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [CC1D553FB893]
http://linked.open...i/riv/nazevZdroje
  • Physica B condensed matter
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 376-377
http://linked.open...iv/tvurceVysledku
  • Humlíček, Josef
  • Štoudek, Richard
http://linked.open...n/vavai/riv/zamer
issn
  • 0921-4526
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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