About: X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers     Goto   Sponge   NotDistinct   Permalink

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  • We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method.
  • We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method. (en)
Title
  • X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers
  • X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers (en)
skos:prefLabel
  • X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers
  • X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers (en)
skos:notation
  • RIV/00216224:14310/05:00013724!RIV10-MSM-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM 143100002), Z(MSM0021620834), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika
  • 38
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 551581
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/05:00013724
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • X-ray; diffuse scattering; defects; nitrogen; silicon (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [838A29588BCD]
http://linked.open...i/riv/nazevZdroje
  • J. Phys. D: Appl. Phys.
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 2005
http://linked.open...iv/tvurceVysledku
  • Holý, Václav
  • Kuběna, Josef
  • Šik, Jan
  • Štoudek, Richard
  • Klang, Pavel
http://linked.open...n/vavai/riv/zamer
issn
  • 0022-3727
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
is http://linked.open...avai/riv/vysledek of
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