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  • We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots.
  • We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots. (en)
  • We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots. (cs)
Title
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots (en)
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots (cs)
skos:prefLabel
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots (en)
  • Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots (cs)
skos:notation
  • RIV/00216224:14310/02:00006541!RIV08-MSM-14310___
http://linked.open.../vavai/riv/strany
  • 229
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/99/0414), P(GA202/99/1613), Z(AV0Z1010914), Z(MSM 143100002)
http://linked.open...iv/cisloPeriodika
  • 2
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 658723
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/02:00006541
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • self-assembled quantum dots; photoluminescence; polarization anisotropy (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [B3144E7F4B28]
http://linked.open...i/riv/nazevZdroje
  • Physica E
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 13
http://linked.open...iv/tvurceVysledku
  • Humlíček, Josef
  • Munzar, Dominik
  • Lorenc, Michal
  • Navrátil, Karel
http://linked.open...n/vavai/riv/zamer
issn
  • 1386-9477
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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