About: Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1002/admi.201300042
Description	Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000x increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000x increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure (en)
Title	Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals (en)
skos:prefLabel	Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals (en)
skos:notation	RIV/00216208:11320/14:10290876!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita	I P S
http://linked.open...avai/riv/aktivity	I, P(GAP204/10/0952), P(GBP108/12/G108), P(GPP204/12/P235), S
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Valenta, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	11633
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/14:10290876
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor; ge; absorption; luminescence; photoluminescence; raman-spectroscopy; quantum confinement; si nanocrystals; room-temperature; optical-transitions (en)
http://linked.open.../riv/klicoveSlovo	optical-transitions quantum confinement raman-spectroscopy absorption luminescence photoluminescence si nanocrystals semiconductor ge room-temperature
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[EB4D4C13DF74]
http://linked.open...i/riv/nazevZdroje	ADVANCED MATERIALS INTERFACES
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by radiation Macroscopic and microscopic luminescence properties of silicon nanoparticles Atomic scale study of bimetallic nanostructures on the Si(100) surface
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	1
http://linked.open...iv/tvurceVysledku	Jelínek, Pavel Valenta, Jan Pelant, Ivan Hapala, Prokop Cibulka, Ondrej Kusova, Katerina Ondic, Lukas
http://linked.open...ain/vavai/riv/wos	000348282400005
issn	2196-7350
number of pages	9 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/admi.201300042
http://localhost/t...ganizacniJednotka	11320

Faceted Search & Find service v1.16.116 as of Feb 22 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3239 as of Feb 22 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 67 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software