About: Model thin films of Ce(III)-based mixed oxides

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1002/sia.5458
Description	Ce(III) sites on cerium oxide-based catalysts are known to be active in many reactions. In order to study the interaction of cerium dioxide with three easily oxidizable elements, aluminum, silicon, and tungsten, and to prepare multicomponent materials of the Ce(III) electronic structure, we followed two inverse approaches: we step-wisely deposited (i) Al, Si, or W onto CeO2(111) and (ii) CeO2 onto Al(111), Si(111), or W(110). We found out that the interaction in all cases was very strong and lead to a formation of mixed oxides of CeAlO3, Ce4.67Si3O13, and Ce6WO12 composition determined by quantitative XPS. The elements were present in Ce(III), Al(III), Si(IV), and W(VI) oxidation states, and the maximum thickness of the films was limited as thicker overlayers prevent the diffusion of the element from the substrate. Above this limit, the deposited aluminum, silicon, or tungsten formed oxides of consequently lower oxidation states on the surface before their purely elemental form was growing, while in the inverse systems, the insufficient diffusion from the Al, Si, and W substrates caused the growth of CeO2 on top of the mixed oxide films. We show that this method permits to prepare model thin films of various thickness and finely tunable Ce(IV) contribution and position (below or above the mixed oxide). Wiley & Sons, Ltd. Ce(III) sites on cerium oxide-based catalysts are known to be active in many reactions. In order to study the interaction of cerium dioxide with three easily oxidizable elements, aluminum, silicon, and tungsten, and to prepare multicomponent materials of the Ce(III) electronic structure, we followed two inverse approaches: we step-wisely deposited (i) Al, Si, or W onto CeO2(111) and (ii) CeO2 onto Al(111), Si(111), or W(110). We found out that the interaction in all cases was very strong and lead to a formation of mixed oxides of CeAlO3, Ce4.67Si3O13, and Ce6WO12 composition determined by quantitative XPS. The elements were present in Ce(III), Al(III), Si(IV), and W(VI) oxidation states, and the maximum thickness of the films was limited as thicker overlayers prevent the diffusion of the element from the substrate. Above this limit, the deposited aluminum, silicon, or tungsten formed oxides of consequently lower oxidation states on the surface before their purely elemental form was growing, while in the inverse systems, the insufficient diffusion from the Al, Si, and W substrates caused the growth of CeO2 on top of the mixed oxide films. We show that this method permits to prepare model thin films of various thickness and finely tunable Ce(IV) contribution and position (below or above the mixed oxide). Wiley & Sons, Ltd. (en)
Title	Model thin films of Ce(III)-based mixed oxides Model thin films of Ce(III)-based mixed oxides (en)
skos:prefLabel	Model thin films of Ce(III)-based mixed oxides Model thin films of Ce(III)-based mixed oxides (en)
skos:notation	RIV/00216208:11320/14:10289726!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA13-10396S), P(LD11047), P(LG12003), P(LH11017)
http://linked.open...iv/cisloPeriodika	10-11
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Matolín, Vladimír Skála, Tomáš
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	29763
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/14:10289726
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	thin-film growth; mixed oxide; cerium oxide; XPS (en)
http://linked.open.../riv/klicoveSlovo	thin-film growth cerium oxide mixed oxide XPS
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[DE59FF420BF0]
http://linked.open...i/riv/nazevZdroje	Surface and Interface Analysis
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials science beamline at synchrotron Elettra in Trieste New materials for planar fuel cells Investigation of Catalytic Processes using Inverse Model Catalysts Model Systems of Nanostructured Bimetallic Materials for Enviromental Applications
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	46
http://linked.open...iv/tvurceVysledku	Matolín, Vladimír Skála, Tomáš
http://linked.open...ain/vavai/riv/wos	000344987400071
issn	0142-2421
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/sia.5458
http://localhost/t...ganizacniJednotka	11320

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