About: Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals

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About: Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1063/1.4904472
Description	The absolute photoluminescence (PL) quantum yield (QY) of multilayers of Silicon nanocrystals (SiNCs) separated by SiO2 barriers were thoroughly studied as function of the barrier thickness, excitation wavelength, and temperature. By mastering the plasma-enhanced chemical vapor deposition growth, we produce a series of samples with the same size-distribution of SiNCs but variable interlayer barrier distance. These samples enable us to clearly demonstrate that the increase of barrier thickness from similar to 1 to larger than 2 nm induces doubling of the PL QY value, which corresponds to the change of number of close neighbors in the hcp structure. The temperature dependence of PL QY suggests that the PL QY changes are due to a thermally activated transport of excitation into non-radiative centers in dark NCs or in the matrix. We estimate that dark NCs represent about 68% of the ensemble of NCs. The PL QY excitation spectra show no significant changes upon changing the barrier thickness and no clear carrier multiplication effects. The dominant effect is the gradual decrease of the PL QY with increasing excitation photon energy. (C) 2014 AIP Publishing LLC. The absolute photoluminescence (PL) quantum yield (QY) of multilayers of Silicon nanocrystals (SiNCs) separated by SiO2 barriers were thoroughly studied as function of the barrier thickness, excitation wavelength, and temperature. By mastering the plasma-enhanced chemical vapor deposition growth, we produce a series of samples with the same size-distribution of SiNCs but variable interlayer barrier distance. These samples enable us to clearly demonstrate that the increase of barrier thickness from similar to 1 to larger than 2 nm induces doubling of the PL QY value, which corresponds to the change of number of close neighbors in the hcp structure. The temperature dependence of PL QY suggests that the PL QY changes are due to a thermally activated transport of excitation into non-radiative centers in dark NCs or in the matrix. We estimate that dark NCs represent about 68% of the ensemble of NCs. The PL QY excitation spectra show no significant changes upon changing the barrier thickness and no clear carrier multiplication effects. The dominant effect is the gradual decrease of the PL QY with increasing excitation photon energy. (C) 2014 AIP Publishing LLC. (en)
Title	Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals (en)
skos:prefLabel	Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals (en)
skos:notation	RIV/00216208:11320/14:10286201!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(7E11021)
http://linked.open...iv/cisloPeriodika	24
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Valenta, Jan Greben, Michael
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	13737
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/14:10286201
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	enhancement; porous silicon; silicon nanocrystals (en)
http://linked.open.../riv/klicoveSlovo	porous silicon enhancement silicon nanocrystals
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[86D3466326CD]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Silicon Nanodots for Solar Cell Tandem
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	105
http://linked.open...iv/tvurceVysledku	Valenta, Jan Gutsch, S. Hiller, D. Zacharias, M. Greben, Michael
http://linked.open...ain/vavai/riv/wos	000346643600063
issn	0003-6951
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1063/1.4904472
http://localhost/t...ganizacniJednotka	11320

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