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Description
  • The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thick neutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfully applied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic materials were extracted. The thickness of the space charge region is another important parameter obtained by using the model.
  • The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thick neutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfully applied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic materials were extracted. The thickness of the space charge region is another important parameter obtained by using the model. (en)
Title
  • The role of the space charge region in surface photovoltaic effect
  • The role of the space charge region in surface photovoltaic effect (en)
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  • The role of the space charge region in surface photovoltaic effect
  • The role of the space charge region in surface photovoltaic effect (en)
skos:notation
  • RIV/00216208:11320/14:10283093!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I
http://linked.open...iv/cisloPeriodika
  • 8
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 43202
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/14:10283093
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • cdte; silicon; solar-cells; exciton diffusion length (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [F2986F198E9D]
http://linked.open...i/riv/nazevZdroje
  • Journal of Applied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 116
http://linked.open...iv/tvurceVysledku
  • Toušek, Jiří
  • Toušková, Jana
http://linked.open...ain/vavai/riv/wos
  • 000342821600035
issn
  • 0021-8979
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.4893973
http://localhost/t...ganizacniJednotka
  • 11320
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