About: Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors     Goto   Sponge   NotDistinct   Permalink

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  • Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.
  • Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity. (en)
Title
  • Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
  • Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors (en)
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  • Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
  • Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors (en)
skos:notation
  • RIV/00216208:11320/13:10140045!RIV14-MSM-11320___
http://linked.open...avai/predkladatel
http://linked.open...avai/riv/aktivita
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  • I
http://linked.open...iv/cisloPeriodika
  • 1
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  • 97696
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/13:10140045
http://linked.open...riv/jazykVysledku
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  • Semi-conducting II-VI materials; CdZnTe; Cadmium compounds; Radiation detectors; Defect (en)
http://linked.open.../riv/klicoveSlovo
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  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [8F2B5BBA649E]
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  • Journal of Crystal Growth
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  • 379
http://linked.open...iv/tvurceVysledku
  • Belas, Eduard
  • Franc, Jan
  • Camarda, G. S.
  • Cui, Y.
  • Hossain, A.
  • Kim, K. H.
  • Yang, G.
  • Bolotnikov, A. E.
  • James, R. B.
  • Kopach, O.
  • Adams, A. L.
  • Fochuk, P. M.
  • Pinder, R.
  • Radja, A.
http://linked.open...ain/vavai/riv/wos
  • 000323191700005
issn
  • 0022-0248
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jcrysgro.2012.11.041
http://localhost/t...ganizacniJednotka
  • 11320
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