About: Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations

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About: Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1063/1.4800538
Description	Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose. The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations. Strain rate changes can be associated to the predominant location of hydrogen in bond center location. (C) 2013 AIP Publishing LLC Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose. The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations. Strain rate changes can be associated to the predominant location of hydrogen in bond center location. (C) 2013 AIP Publishing LLC (en)
Title	Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations (en)
skos:prefLabel	Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations (en)
skos:notation	RIV/00216208:11320/13:10140012!RIV14-MSM-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	I
http://linked.open...avai/riv/aktivity	I
http://linked.open...iv/cisloPeriodika	15
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Holý, Václav Valeš, Václav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	84421
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/13:10140012
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	simulations; ab-initio; analysis; scattering; X-ray; between; Correlation; silicon; hydrogen-implanted; strain; Lattice (en)
http://linked.open.../riv/klicoveSlovo	strain analysis silicon between scattering ab-initio Correlation X-ray simulations Lattice hydrogen-implanted
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[C7FEB6C75B19]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	113
http://linked.open...iv/tvurceVysledku	Holý, Václav Valeš, Václav Bilteanu, L. Capello, L. Crocombette, J. P. Mazen, F. Penot, J. D. Reboh, S. Rieutord, F.
http://linked.open...ain/vavai/riv/wos	000318251400017
issn	0021-8979
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1063/1.4800538
http://localhost/t...ganizacniJednotka	11320

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