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Description
| - We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 degrees C with average Ge contents of 30%, the Si cap layer is misfit-and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.
- We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 degrees C with average Ge contents of 30%, the Si cap layer is misfit-and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands. (en)
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Title
| - Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon
- Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon (en)
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skos:prefLabel
| - Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon
- Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon (en)
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skos:notation
| - RIV/00216208:11320/13:10133654!RIV14-MSM-11320___
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216208:11320/13:10133654
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - dots; devices; islands; mobility (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Holý, Václav
- Stangl, J.
- Bauer, G.
- Etzelstorfer, T.
- Hrauda, N.
- Deiter, C.
- Seeck, O. H.
- Zhang, J. J.
- Gerharz, J. C.
- Groiss, H.
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http://linked.open...ain/vavai/riv/wos
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number of pages
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http://bibframe.org/vocab/doi
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http://localhost/t...ganizacniJednotka
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