About: Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals

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Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1007/s11664-012-2001-1
Description	We report on new etching solutions for treatment of CdTe and CdZnTe surfaces based on the iodine-emerging etchant composition KIO3-KI-citric acid (C6H8O7). CdTe samples with (111), (110), and (100) orientations, and also Cd1-x Zn (x) Te (x = 0.04, 0.1) samples with (111), (110), (100), and (211) orientations were investigated. The dissolution rate was determined as a function of solution composition, etchant storage time, disc rotation speed, and temperature. It was established that this chemical dissolution is diffusion controlled. Study of the chemical composition and structure of (211)B Cd1-x Zn (x) Te surfaces etched under different conditions was carried out. x-Ray photoelectron spectroscopy measurements showed that a stoichiometric surface was achieved after briefly heating the etched surface in a vacuum. Reflection high-energy electron diffraction measurements revealed a high-quality single-crystalline surface layer in samples etched with KIO3-KI-citric acid solutions as compared with those etched with a bromine-methanol treatment. The etching compositions were shown to be useful for controlled removal of semiconductor material, and also for chemical polishing of CdTe-based surfaces. We report on new etching solutions for treatment of CdTe and CdZnTe surfaces based on the iodine-emerging etchant composition KIO3-KI-citric acid (C6H8O7). CdTe samples with (111), (110), and (100) orientations, and also Cd1-x Zn (x) Te (x = 0.04, 0.1) samples with (111), (110), (100), and (211) orientations were investigated. The dissolution rate was determined as a function of solution composition, etchant storage time, disc rotation speed, and temperature. It was established that this chemical dissolution is diffusion controlled. Study of the chemical composition and structure of (211)B Cd1-x Zn (x) Te surfaces etched under different conditions was carried out. x-Ray photoelectron spectroscopy measurements showed that a stoichiometric surface was achieved after briefly heating the etched surface in a vacuum. Reflection high-energy electron diffraction measurements revealed a high-quality single-crystalline surface layer in samples etched with KIO3-KI-citric acid solutions as compared with those etched with a bromine-methanol treatment. The etching compositions were shown to be useful for controlled removal of semiconductor material, and also for chemical polishing of CdTe-based surfaces. (en)
Title	Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals (en)
skos:prefLabel	Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals (en)
skos:notation	RIV/00216208:11320/12:10127045!RIV13-GA0-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP102/10/0148)
http://linked.open...iv/cisloPeriodika	10
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Höschl, Pavel Moravec, Pavel Franc, Jan Mašek, Karel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	168514
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10127045
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	RHEED; XPS; roughness; surface quality; chemical etching; CdZnTe; CdTe (en)
http://linked.open.../riv/klicoveSlovo	roughness CdTe RHEED XPS surface quality CdZnTe chemical etching
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[0D76FD2703A5]
http://linked.open...i/riv/nazevZdroje	Journal of Electronic Materials
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	41
http://linked.open...iv/tvurceVysledku	Franc, Jan Höschl, Pavel Mašek, Karel Moravec, Pavel Tomashik, Zinajda F. Ivanits'ka, Valentyna G. Tomashik, Vasyl M.
http://linked.open...ain/vavai/riv/wos	000308655500028
issn	0361-5235
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s11664-012-2001-1
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals

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