About: Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires

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About: Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate that the efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian size distribution of the Si-NW diameter and reveals also the presence of recombination from the Si-NW excited state which can facilitate a fast capture of excitons into QD centers. Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate that the efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian size distribution of the Si-NW diameter and reveals also the presence of recombination from the Si-NW excited state which can facilitate a fast capture of excitons into QD centers. (en)
Title	Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires (en)
skos:prefLabel	Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires (en)
skos:notation	RIV/00216208:11320/11:10109233!RIV12-AV0-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(KAN400100701), P(LC510), Z(MSM0021620835)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Valenta, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	190781
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/11:10109233
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	exciton; luminescence; silicon; quantum dot; Nanowire (en)
http://linked.open.../riv/klicoveSlovo	Nanowire exciton luminescence quantum dot silicon
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[3322C567FFD6]
http://linked.open...i/riv/nazevZdroje	Nano Letters
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	11
http://linked.open...iv/tvurceVysledku	Bruhn, Benjamin Linnros, Jan Valenta, Jan
http://linked.open...ain/vavai/riv/wos	000292849400075
http://linked.open...n/vavai/riv/zamer	Fyzika molekulárních, makromolekulárních a biologických systémů
issn	1530-6984
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1021/nl201610g
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires

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