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  • The blinking statistics of numerous single silicon quantum dots fabricated by electron-beam lithography, plasma etching, and oxidation have been analyzed. Purely exponential on- and off-time distributions were found consistent with the absence of statistical aging. This is in contrast to blinking reports in the literature where power-law distributions prevail as well as observations of statistical aging in nanocrystal ensembles. A linear increase of the switching frequency with excitation power density indicates a domination of single-photon absorption processes, possibly through a direct transfer of charges to trap states without the need for a bimolecular Auger mechanism. Photoluminescence saturation with increasing excitation is not observed; however, there is a threshold in excitation (coinciding with a mean occupation of one exciton per nanocrystal) where a change from linear to square-root increase occurs. Finally, the statistics of blinking of single quantum dots in terms of average on-time, blinking frequency and blinking amplitude reveal large variations (several orders) without any significant correlation demonstrating the individual microscopic character of each quantum dot.
  • The blinking statistics of numerous single silicon quantum dots fabricated by electron-beam lithography, plasma etching, and oxidation have been analyzed. Purely exponential on- and off-time distributions were found consistent with the absence of statistical aging. This is in contrast to blinking reports in the literature where power-law distributions prevail as well as observations of statistical aging in nanocrystal ensembles. A linear increase of the switching frequency with excitation power density indicates a domination of single-photon absorption processes, possibly through a direct transfer of charges to trap states without the need for a bimolecular Auger mechanism. Photoluminescence saturation with increasing excitation is not observed; however, there is a threshold in excitation (coinciding with a mean occupation of one exciton per nanocrystal) where a change from linear to square-root increase occurs. Finally, the statistics of blinking of single quantum dots in terms of average on-time, blinking frequency and blinking amplitude reveal large variations (several orders) without any significant correlation demonstrating the individual microscopic character of each quantum dot. (en)
Title
  • Blinking Statistics of Silicon Quantum Dots
  • Blinking Statistics of Silicon Quantum Dots (en)
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  • Blinking Statistics of Silicon Quantum Dots
  • Blinking Statistics of Silicon Quantum Dots (en)
skos:notation
  • RIV/00216208:11320/11:10109172!RIV12-AV0-11320___
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  • P(KAN400100701), P(LC510), Z(MSM0021620835)
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  • 12
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  • 188502
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  • RIV/00216208:11320/11:10109172
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  • bleaching; statistical aging; photoluminescence; nanocrystal; quantum dot; silicon; intermittency; Blinking (en)
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  • US - Spojené státy americké
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  • [7597B763FF97]
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  • Nano Letters
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  • 11
http://linked.open...iv/tvurceVysledku
  • Bruhn, Benjamin
  • Fatemeh, Sangghaleh
  • Linnros, Jan
  • Valenta, Jan
http://linked.open...ain/vavai/riv/wos
  • 000297950200081
http://linked.open...n/vavai/riv/zamer
issn
  • 1530-6984
number of pages
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  • 10.1021/nl203618h
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  • 11320
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