About: Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.scientific.net/SSP.178-179.43
Description	Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions. Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions. (en)
Title	Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon (en)
skos:prefLabel	Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon (en)
skos:notation	RIV/00216208:11320/11:10106230!RIV12-MSM-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	2011
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Matějová, Jana
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	189997
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/11:10106230
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon; Nano-Structured; Grown; Epitaxially; Germanium; Defects; Structural; Characterization (en)
http://linked.open.../riv/klicoveSlovo	Silicon Defects Characterization Epitaxially Germanium Grown Nano-Structured Structural
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[9C9A07532DF5]
http://linked.open...i/riv/nazevZdroje	Solid State Phenomena
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	178-179
http://linked.open...iv/tvurceVysledku	Bauer, Joachim Kozlowski, Grzegorz Matějová, Jana Peter, Zaumseil Schroeder, Thomas Schubert, Markus Andreas Tillack, Bernd Yamamoto, Yuji
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	1012-0394
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.4028/www.scientific.net/SSP.178-179.43
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

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