About: Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties

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About: Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1
Description	We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=310(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviation of stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolonged exposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(Vs)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger theory of quasi-chemical reactions, and compared the findings to those obtained for undoped CdTe. We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=310(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviation of stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolonged exposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(Vs)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger theory of quasi-chemical reactions, and compared the findings to those obtained for undoped CdTe. (en)
Title	Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties (en)
skos:prefLabel	Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties (en)
skos:notation	RIV/00216208:11320/11:10105613!RIV12-MSM-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Grill, Roman Belas, Eduard
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	196196
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/11:10105613
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Point defects; Electrical properties; Annealing; CdZnTe:In (en)
http://linked.open.../riv/klicoveSlovo	Annealing CdZnTe:In Electrical properties Point defects
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[3AE94924D2A0]
http://linked.open...i/riv/nazevZdroje	IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	58
http://linked.open...iv/tvurceVysledku	Belas, Eduard Grill, Roman Bolotnikov, Aleksey E. Fochuk, Petro James, Ralph B. Kopach, Oleg Nakonechnyi, Igor Panchuk, Oleg Verzhak, Yevheniya Yang, Ge
http://linked.open...ain/vavai/riv/wos	000295778000005
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	0018-9499
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/TNS.2011.2164580
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties

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