About: Surface characterization of thin silicon-rich oxide films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.sciencedirect.com/science/article/pii/S0022286010009324
Description	The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specular reflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3) phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of the TA, LA, LO, and TO-like phonon bands typical of amorphous materials. (C) 2010 Elsevier B.V. All rights reserved. The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specular reflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3) phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of the TA, LA, LO, and TO-like phonon bands typical of amorphous materials. (C) 2010 Elsevier B.V. All rights reserved. (en)
Title	Surface characterization of thin silicon-rich oxide films Surface characterization of thin silicon-rich oxide films (en)
skos:prefLabel	Surface characterization of thin silicon-rich oxide films Surface characterization of thin silicon-rich oxide films (en)
skos:notation	RIV/00216208:11320/11:10103802!RIV12-MSM-11320___
http://linked.open...avai/predkladatel	Matematicko-fyzikální fakulta
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	1-3
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Holý, Václav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	233483
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/11:10103802
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	films; oxide; silicon-rich; thin; characterization; Surface (en)
http://linked.open.../riv/klicoveSlovo	Surface characterization films oxide silicon-rich thin
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[245BEC6210A3]
http://linked.open...i/riv/nazevZdroje	Journal of Molecular Structure
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	13 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	993
http://linked.open...iv/tvurceVysledku	Buljan, M. Holý, Václav Chiasera, A. Ferrari, M. Furic, K. Gamulin, O. Ivanda, M. Marcius, M. Mazzola, M. Music, S. Righini, GC Ristic, D. Ristic, M.
http://linked.open...ain/vavai/riv/wos	000291066000034
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	0022-2860
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.molstruc.2010.11.066
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Surface characterization of thin silicon-rich oxide films Surface characterization of thin silicon-rich oxide films

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