About: Electronic structure of Bi lines on clean and H-passivated Si(100)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections. By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections. (en)
Title	Electronic structure of Bi lines on clean and H-passivated Si(100) Electronic structure of Bi lines on clean and H-passivated Si(100) (en)
skos:prefLabel	Electronic structure of Bi lines on clean and H-passivated Si(100) Electronic structure of Bi lines on clean and H-passivated Si(100) (en)
skos:notation	RIV/00216208:11320/10:10071285!RIV11-MSM-11320___
http://linked.open...avai/riv/aktivita	S Z
http://linked.open...avai/riv/aktivity	S, Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	17
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Setvín, Martin Javorský, Jakub
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	256785
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/10:10071285
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	LDOS; STM; Si(100); Bi lines (en)
http://linked.open.../riv/klicoveSlovo	Bi lines LDOS STM Si(100)
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[B502774E654D]
http://linked.open...i/riv/nazevZdroje	Journal of Physics Condensed Matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	22
http://linked.open...iv/tvurceVysledku	Miki, K. Setvín, Martin Javorský, Jakub Owen, J.H.G.
http://linked.open...ain/vavai/riv/wos	000276547300007
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	0953-8984
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Electronic structure of Bi lines on clean and H-passivated Si(100) Electronic structure of Bi lines on clean and H-passivated Si(100) Electronic structure of Bi lines on clean and H-passivated Si(100)

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