About: Influence of n-type doping on electron spin dephasing in CdTe

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. (en)
Title	Influence of n-type doping on electron spin dephasing in CdTe Influence of n-type doping on electron spin dephasing in CdTe (en)
skos:prefLabel	Influence of n-type doping on electron spin dephasing in CdTe Influence of n-type doping on electron spin dephasing in CdTe (en)
skos:notation	RIV/00216208:11320/10:10070151!RIV11-GA0-11320___
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(GD202/09/H041), P(LC510), S
http://linked.open...iv/cisloPeriodika	15
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Grill, Roman Horodyská, Petra Sprinzl, Daniel Schmoranzerová, Eva Belas, Eduard Němec, Petr Malý, Petr Tesařová, Naďa
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	263727
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/10:10070151
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	CdTev; dephasing; spin; electron; doping; n-type; Influence (en)
http://linked.open.../riv/klicoveSlovo	Influence dephasing CdTev n-type doping electron spin
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[1377C36355C1]
http://linked.open...i/riv/nazevZdroje	Physical Review B - Condensed Matter and Materials Physics
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	8 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Physics of nanostructures
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	82
http://linked.open...iv/tvurceVysledku	Belas, Eduard Grill, Roman Němec, Petr Malý, Petr Tesařová, Naďa Horodyská, Petra Rozkotová, Eva Sprinzl, Daniel
http://linked.open...ain/vavai/riv/wos	000282507800001
issn	1098-0121
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Influence of n-type doping on electron spin dephasing in CdTe Influence of n-type doping on electron spin dephasing in CdTe Influence of n-type doping on electron spin dephasing in CdTe

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