About: Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi

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About: Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We investigate the origin of scanning tunneling microscope (STM) contrast in lateral Ge-Si nanostructures prepared on the Si(111)-V3xV3-Bi surface [Phys. Rev. Lett. 91, 096102 (2003)]. At low sample bias, the voltage-dependent apparent height difference between Si- and Ge-terminated areas in STM images corresponds exceptionally well to the difference in voltage integrated scanning tunneling spectroscopy (STS) curves measured in Si- and Ge-terminated areas. The STS curves and the STM contrast reflect both differences in local density of states and in tip-induced effects in Si and Ge-terminated areas. At higher bias voltage, the tunneling into unoccupied states on Ge-terminated areas is strongly influenced by lowering of the local height of the tunneling barrier with respect to Si. The lowering of the local tunneling barrier height vanishes for the occupied states and can be traced back to different tip-induced band bending on Si- and Ge-terminated areas. We investigate the origin of scanning tunneling microscope (STM) contrast in lateral Ge-Si nanostructures prepared on the Si(111)-V3xV3-Bi surface [Phys. Rev. Lett. 91, 096102 (2003)]. At low sample bias, the voltage-dependent apparent height difference between Si- and Ge-terminated areas in STM images corresponds exceptionally well to the difference in voltage integrated scanning tunneling spectroscopy (STS) curves measured in Si- and Ge-terminated areas. The STS curves and the STM contrast reflect both differences in local density of states and in tip-induced effects in Si and Ge-terminated areas. At higher bias voltage, the tunneling into unoccupied states on Ge-terminated areas is strongly influenced by lowering of the local height of the tunneling barrier with respect to Si. The lowering of the local tunneling barrier height vanishes for the occupied states and can be traced back to different tip-induced band bending on Si- and Ge-terminated areas. (en)
Title	Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi (en)
skos:prefLabel	Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi (en)
skos:notation	RIV/00216208:11320/10:10070069!RIV11-MSM-11320___
http://linked.open...avai/riv/aktivita	S Z
http://linked.open...avai/riv/aktivity	S, Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	24
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Dvořák, Filip Mysliveček, Josef
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	286431
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/10:10070069
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	nanowires; nanostructures; Ge-Si; band bending; tunneling barrier; local density of states; contrast; scanning tunneling microscopy (en)
http://linked.open.../riv/klicoveSlovo	local density of states scanning tunneling microscopy contrast nanowires Ge-Si band bending tunneling barrier nanostructures
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[26814B57E04B]
http://linked.open...i/riv/nazevZdroje	Physical Review B - Condensed Matter and Materials Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	81
http://linked.open...iv/tvurceVysledku	Dvořák, Filip Mysliveček, Josef Strozecka, A. Voigtlander, P.
http://linked.open...ain/vavai/riv/wos	000279145200001
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	1098-0121
number of pages	10 (xsd:int)
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi

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