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  • Cerium oxide deposited by physical vapor deposition of cerium in an oxygen atmosphere on Cu(111) surface growth epitaxially with CeO2(1 1 1) plane parallel to the Cu(111) plane. The growth and morphology of CeO2(1 1 1) films were investigated by means of low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). LEED shows good long range ordering and STM reveals a three-dimensional growth mode (Vollmer-Weber) with formation of a closed film only at larger thickness. Closed and atomically flat ceria films of larger thickness (3 ML) are obtained by applying a multistep preparation procedure, in which successive ceria layers are homoepitaxially grown on this initial film. The ceria films show similarities with the morphology of CeO2(1 1 1) single crystal surfaces, suggesting the possibility to model bulk ceria by thin film systems.
  • Cerium oxide deposited by physical vapor deposition of cerium in an oxygen atmosphere on Cu(111) surface growth epitaxially with CeO2(1 1 1) plane parallel to the Cu(111) plane. The growth and morphology of CeO2(1 1 1) films were investigated by means of low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). LEED shows good long range ordering and STM reveals a three-dimensional growth mode (Vollmer-Weber) with formation of a closed film only at larger thickness. Closed and atomically flat ceria films of larger thickness (3 ML) are obtained by applying a multistep preparation procedure, in which successive ceria layers are homoepitaxially grown on this initial film. The ceria films show similarities with the morphology of CeO2(1 1 1) single crystal surfaces, suggesting the possibility to model bulk ceria by thin film systems. (en)
Title
  • A route to continuous ultra-thin cerium oxide films on Cu(1 1 1)
  • A route to continuous ultra-thin cerium oxide films on Cu(1 1 1) (en)
skos:prefLabel
  • A route to continuous ultra-thin cerium oxide films on Cu(1 1 1)
  • A route to continuous ultra-thin cerium oxide films on Cu(1 1 1) (en)
skos:notation
  • RIV/00216208:11320/09:00206339!RIV10-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 23
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 301565
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/09:00206339
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • route; continuous; ultra-thin; cerium; oxide; films (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [ED0B3DFDD793]
http://linked.open...i/riv/nazevZdroje
  • Surface Science
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 603
http://linked.open...iv/tvurceVysledku
  • Matolín, Vladimír
  • Lykhach, Y.
  • Staudt, T.
  • Hammer, L.
  • Libuda, L.
  • Schneider, M. A.
http://linked.open...ain/vavai/riv/wos
  • 000272431600009
http://linked.open...n/vavai/riv/zamer
issn
  • 0039-6028
number of pages
http://localhost/t...ganizacniJednotka
  • 11320
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