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Description
  • In the frame of the project, high quality amorphous chalcogenide Ge-(As, Sb)-Se-(Te) thin films will be fabricated by pulsed laser deposition employing pulsed lasers with different characteristics (wavelength, pulse duration). The fabricated layers will be characterized in terms of the structure, morphology, and optical properties. The deposition process will be monitored by the studying the plasma plume with the ICCD camera fast imaging and space- and timeresolved optical emission spectroscopy. The obtained data should result in deeper understanding of the processes occurring during the thin films growth by plasma based techniques. (en)
  • V rámci projektu budou pulzní laserovou depozicí za použití pulzních laserů s různými parametry (vlnová délka, délka pulzu) připraveny vysoce kvalitní tenké vrstvy amorfních chalkogenidů Ge-(As, Sb)-Se-(Te). Připravené vrstvy budou charakterizovány ve smyslu struktury, morfologie a optických vlastností. Depoziční proces bude monitorován studiem plazmatu rychlým zobrazováním ICCD kamerou a prostorově a časově rozlišenou optickou emisní spektroskopií. Získaná data povedou k hlubšímu pochopení procesů probíhajících v průběhu růstu tenkých vrstev plazmatickými technikami.
Title
  • Plasma processes for amorphous chalcogenides thin films growth (en)
  • Plazmatické procesy pro růst tenkých vrstev amorfních chalkogenidů
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  • 7AMB13FR039
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  • pulsed laser deposition; amorphous chalcogenides; thin films; plasma dynamics (en)
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  • pulsed laser deposition
  • amorphous chalcogenides
  • thin films
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