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| - Effects of annealing and ion etching on the structural, electrical and optical properties of sputtered ZnO:Al (AZO) thin films were investigated. The post-deposition annealing at temperatures TA = 200?400 °C in the forming gas (80% N2/20% H2) for 1 h and ion RF-sputter etching after annealing were used. Ion-sputter etching rate was 7 nm/min. The surface topography changed noticeably after ion-sputter etching: the surface of the sample was rougher (Ra = 33 nm) in comparison with annealed sample only (Ra = 9 nm). After the post-deposition annealing temperature TA = 400 °C and ion-sputter etching thin films have higher integral transmittance (in the range of λ = 400?1000 nm) than non-etched samples. The figure of merit (F) became higher with increase of annealing temperature and the maximum value was F = 8%/Ω at TA = 400 °C (Rs = 10 Ω, Tint = 86%).
- Effects of annealing and ion etching on the structural, electrical and optical properties of sputtered ZnO:Al (AZO) thin films were investigated. The post-deposition annealing at temperatures TA = 200?400 °C in the forming gas (80% N2/20% H2) for 1 h and ion RF-sputter etching after annealing were used. Ion-sputter etching rate was 7 nm/min. The surface topography changed noticeably after ion-sputter etching: the surface of the sample was rougher (Ra = 33 nm) in comparison with annealed sample only (Ra = 9 nm). After the post-deposition annealing temperature TA = 400 °C and ion-sputter etching thin films have higher integral transmittance (in the range of λ = 400?1000 nm) than non-etched samples. The figure of merit (F) became higher with increase of annealing temperature and the maximum value was F = 8%/Ω at TA = 400 °C (Rs = 10 Ω, Tint = 86%). (en)
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Title
| - Modification of AZO thin-film properties by annealing and ion etching
- Modification of AZO thin-film properties by annealing and ion etching (en)
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skos:prefLabel
| - Modification of AZO thin-film properties by annealing and ion etching
- Modification of AZO thin-film properties by annealing and ion etching (en)
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skos:notation
| - RIV/49777513:23640/10:00503188!RIV11-MSM-23640___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23640/10:00503188
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - ZnO:Al; RF diode sputtering; annealing; ion etching (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Novotný, Ivan
- Netrvalová, Marie
- Šutta, Pavol
- Prušáková, Lucie
- Flickyngerová, Soňa
- Tvarožek, Vladimír
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http://linked.open...ain/vavai/riv/wos
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