About: Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

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About: Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.sciencedirect.com/science/article/pii/S0168900213007973
Description	Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data. Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data. (en)
Title	Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation (en)
skos:prefLabel	Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation (en)
skos:notation	RIV/68407700:21670/13:00214501!RIV14-MSM-21670___
http://linked.open...avai/riv/aktivita	P S V
http://linked.open...avai/riv/aktivity	P(LA08032), S, V
http://linked.open...iv/cisloPeriodika	730
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Dammer, Jiří Sopko, Vít
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Ústav technické a experimentální fyziky ČVUT
http://linked.open...dnocenehoVysledku	69114
http://linked.open...ai/riv/idVysledku	RIV/68407700:21670/13:00214501
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Si PIN diode; Dosimetry; Gamma flux; Energy traps; DLTS (en)
http://linked.open.../riv/klicoveSlovo	Energy traps Gamma flux Si PIN diode DLTS Dosimetry
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[54EAA3DC01E8]
http://linked.open...i/riv/nazevZdroje	Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	International experiment ATLAS-CERN
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	730
http://linked.open...iv/tvurceVysledku	Chren, Dominik Sopko, Bruno Dammer, Jiří Sopko, Vít
http://linked.open...ain/vavai/riv/wos	000326944100030
issn	0168-9002
number of pages	3 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.nima.2013.05.175
http://localhost/t...ganizacniJednotka	21670

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