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  • Studies of radiation defects continue to be important and will find increasing application as the radiation doses expected to be measured by semiconductor detectors in future experiments will keep increasing to higher values. An endeavor to capture some of the changes associated with high radiation doses has been the basic motivation for the present work.
  • Studies of radiation defects continue to be important and will find increasing application as the radiation doses expected to be measured by semiconductor detectors in future experiments will keep increasing to higher values. An endeavor to capture some of the changes associated with high radiation doses has been the basic motivation for the present work. (en)
Title
  • Influence of irradiation on defects creation in PIN diode structure
  • Influence of irradiation on defects creation in PIN diode structure (en)
skos:prefLabel
  • Influence of irradiation on defects creation in PIN diode structure
  • Influence of irradiation on defects creation in PIN diode structure (en)
skos:notation
  • RIV/68407700:21670/12:00204364!RIV13-MSM-21670___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(LA08032), S
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 141460
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21670/12:00204364
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • PIN diode; neutron flux; energy defects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [5E6A73D1BACB]
http://linked.open...v/mistoKonaniAkce
  • Strbske pleso
http://linked.open...i/riv/mistoVydani
  • Bratislava
http://linked.open...i/riv/nazevZdroje
  • Proceedings of 18th Internacional Conference on applied physics of condensed matter
http://linked.open...in/vavai/riv/obor
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http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Chren, Dominik
  • Sopko, Bruno
  • Dammer, Jiří
  • Sopko, Vít
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
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  • Slovenská technická univerzita v Bratislave
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  • 978-80-227-3720-3
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  • 21670
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