About: Study of technological and radiation defects in silicon

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators. In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators. (en)
Title	Study of technological and radiation defects in silicon Study of technological and radiation defects in silicon (en)
skos:prefLabel	Study of technological and radiation defects in silicon Study of technological and radiation defects in silicon (en)
skos:notation	RIV/68407700:21670/10:00177086!RIV11-MSM-21670___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM6840770029)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Sopko, Vít
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Ústav technické a experimentální fyziky ČVUT
http://linked.open...dnocenehoVysledku	290841
http://linked.open...ai/riv/idVysledku	RIV/68407700:21670/10:00177086
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon; defects; DLTS (en)
http://linked.open.../riv/klicoveSlovo	defects silicon DLTS
http://linked.open...ontrolniKodProRIV	[F4BE725474FA]
http://linked.open...v/mistoKonaniAkce	ROZNOV POD RADHOSTEM
http://linked.open...i/riv/mistoVydani	Rožnov pod Radhoštěm
http://linked.open...i/riv/nazevZdroje	Silicon 2010
http://linked.open...in/vavai/riv/obor	BF
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Sopko, Bruno Sopko, Vít Semenko, Oleksandr Semenko, Serhiy
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-11-02 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Fundamental Experiments in Physics of Microworld
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	TECON-Scientific
https://schema.org/isbn	978-80-254-7361-0
http://localhost/t...ganizacniJednotka	21670

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