About: Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons

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About: Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1016/j.nima.2009.03.124
Description	Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material. Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutron imaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the results a significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material. (en)
Title	Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons (en)
skos:prefLabel	Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons (en)
skos:notation	RIV/68407700:21670/09:00165971!RIV12-MSM-21670___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(LC06041)
http://linked.open...iv/cisloPeriodika	607
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Linhart, Vladimír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Ústav technické a experimentální fyziky ČVUT
http://linked.open...dnocenehoVysledku	309238
http://linked.open...ai/riv/idVysledku	RIV/68407700:21670/09:00165971
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor detectors; radiation damage (en)
http://linked.open.../riv/klicoveSlovo	radiation damage semiconductor detectors
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[5557D08F5011]
http://linked.open...i/riv/nazevZdroje	Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by energetic radiation.
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	2009
http://linked.open...iv/tvurceVysledku	Linhart, Vladimír Dubecky, F. Ladziansky, M. Necas, V. Sagatova, A.
http://linked.open...ain/vavai/riv/wos	000268987900040
issn	0168-9002
number of pages	3 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.nima.2009.03.124
http://localhost/t...ganizacniJednotka	21670

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