About: Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators     Goto   Sponge   NotDistinct   Permalink

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  • Mg-codoped Lu3Al5O12:Ce single crystal scintillators were prepared by a micropulling down method in a wide concentration range from 0 to 3000 ppm of Mg codopant. Their structure and chemical composition were checked by X-ray diffraction and electron probe microanalysis techniques. Absorption and luminescence spectra, photoluminescence decays, and thermoluminescence glow curves were measured together with several other scintillation characteristics, namely, the scintillation decay, light yield, afterglow, and radiation damage to reveal the effect of Mg codoping. Several material characteristics manifest a beneficial effect of Mg codopant. We propose a model explaining the mechanism of material improvement which is based on the stabilization of a part of the cerium dopant in the tetravalent charge state. The stable Ce4+ center provides an additional fast radiative recombination pathway in the scintillation mechanism and efficiently competes with electron traps in garnet scintillators.
  • Mg-codoped Lu3Al5O12:Ce single crystal scintillators were prepared by a micropulling down method in a wide concentration range from 0 to 3000 ppm of Mg codopant. Their structure and chemical composition were checked by X-ray diffraction and electron probe microanalysis techniques. Absorption and luminescence spectra, photoluminescence decays, and thermoluminescence glow curves were measured together with several other scintillation characteristics, namely, the scintillation decay, light yield, afterglow, and radiation damage to reveal the effect of Mg codoping. Several material characteristics manifest a beneficial effect of Mg codopant. We propose a model explaining the mechanism of material improvement which is based on the stabilization of a part of the cerium dopant in the tetravalent charge state. The stable Ce4+ center provides an additional fast radiative recombination pathway in the scintillation mechanism and efficiently competes with electron traps in garnet scintillators. (en)
Title
  • Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators
  • Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators (en)
skos:prefLabel
  • Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators
  • Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators (en)
skos:notation
  • RIV/68407700:21340/14:00218453!RIV15-MSM-21340___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(GA13-09876S), P(LH14266), S
http://linked.open...iv/cisloPeriodika
  • 9
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 9996
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21340/14:00218453
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • scintillators; garnets; luminescence (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [638BDA6381DA]
http://linked.open...i/riv/nazevZdroje
  • Crystal Growth & Design
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 14
http://linked.open...iv/tvurceVysledku
  • Kamada, K.
  • Yoshikawa, A.
  • Kurosawa, S.
  • Babin, V.
  • Nikl, M.
  • Beitlerova, A.
  • Pilařová, Kateřina
  • Bartosiewicz, K.
  • Mihokova, E.
  • Pejchal, J.
http://linked.open...ain/vavai/riv/wos
  • 000341226500069
issn
  • 1528-7483
number of pages
http://bibframe.org/vocab/doi
  • 10.1021/cg501005s
http://localhost/t...ganizacniJednotka
  • 21340
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