Attributes | Values |
---|
rdf:type
| |
Description
| - Optical properties of many prototypes of Vertical-cavity surface-emitting laser (VCSEL) diodes emitting in Mid-Infrared range of spectra were measured. VCSEL is in principle special type of PIN diode. Multiple quantum wells form active region of the laser (intrinsic area). Active region is composed of eight In0,35Ga0,65As0,1Sb0,9 quantum wells 10 nm thick embedded in 30 nm thick Al0,35Ga0,65As0,03Sb0,97 barriers. This area is from both sides surrounded with Bragg reflectors, which forms optical cavity for defined wavelength. The lasers are characterized by: (1) emitted radiation wavelength (laser can emit single mode or multi mode wavelength), (2) full width in half maximum of spectral line, (3) optical power of the laser, (4) far field profile. Very important is to determine the dependence of laser properties on the change of electric current or external temperature. Semiconductor structures (grown on GaSb substrates) of measured lasers were prepared by Molecular beam epitaxy method.
- Optical properties of many prototypes of Vertical-cavity surface-emitting laser (VCSEL) diodes emitting in Mid-Infrared range of spectra were measured. VCSEL is in principle special type of PIN diode. Multiple quantum wells form active region of the laser (intrinsic area). Active region is composed of eight In0,35Ga0,65As0,1Sb0,9 quantum wells 10 nm thick embedded in 30 nm thick Al0,35Ga0,65As0,03Sb0,97 barriers. This area is from both sides surrounded with Bragg reflectors, which forms optical cavity for defined wavelength. The lasers are characterized by: (1) emitted radiation wavelength (laser can emit single mode or multi mode wavelength), (2) full width in half maximum of spectral line, (3) optical power of the laser, (4) far field profile. Very important is to determine the dependence of laser properties on the change of electric current or external temperature. Semiconductor structures (grown on GaSb substrates) of measured lasers were prepared by Molecular beam epitaxy method. (en)
|
Title
| - Characterization of VCSEL Diodes Emitting in Mid-infrared Range of Spectra
- Characterization of VCSEL Diodes Emitting in Mid-infrared Range of Spectra (en)
|
skos:prefLabel
| - Characterization of VCSEL Diodes Emitting in Mid-infrared Range of Spectra
- Characterization of VCSEL Diodes Emitting in Mid-infrared Range of Spectra (en)
|
skos:notation
| - RIV/68407700:21340/10:00166049!RIV11-MSM-21340___
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21340/10:00166049
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - VCSEL; spektrální čára; optický výkon; charakteristická teplota; vzdálené pole (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...v/mistoKonaniAkce
| |
http://linked.open...i/riv/mistoVydani
| |
http://linked.open...i/riv/nazevZdroje
| |
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...iv/tvurceVysledku
| - Oswald, J.
- Tomiak, Zdeněk
- Galle, Jaromír
|
http://linked.open...vavai/riv/typAkce
| |
http://linked.open.../riv/zahajeniAkce
| |
http://linked.open...n/vavai/riv/zamer
| |
number of pages
| |
http://purl.org/ne...btex#hasPublisher
| - České vysoké učení technické v Praze
|
https://schema.org/isbn
| |
http://localhost/t...ganizacniJednotka
| |