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Description
  • Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ). Tested temperature of the sample (55°C – 110°C) was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observa
  • Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ). Tested temperature of the sample (55°C – 110°C) was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observa (en)
Title
  • ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES
  • ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES (en)
skos:prefLabel
  • ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES
  • ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES (en)
skos:notation
  • RIV/68407700:21230/14:00221516!RIV15-MSM-21230___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(7E10061), S
http://linked.open...iv/cisloPeriodika
  • 5
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 3314
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21230/14:00221516
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • passivation; water vapour; thin film solar cell; polycrystalline silicon (poly-Si) (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [A4A036661CE2]
http://linked.open...i/riv/nazevZdroje
  • Acta Polytechnica
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 54
http://linked.open...iv/tvurceVysledku
  • Benda, Vítězslav
  • Pikna, Peter
  • Fejfar, A.
  • Píč, V.
issn
  • 1210-2709
number of pages
http://bibframe.org/vocab/doi
  • 10.14311/AP.2014.54.0341
http://localhost/t...ganizacniJednotka
  • 21230
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