About: ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

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About: ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.elsevier.com/locate/sse
Description	4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C–V profiling and forward I–V curves. Calibration procedure of model parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated and measured forward I–V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices. 4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C–V profiling and forward I–V curves. Calibration procedure of model parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated and measured forward I–V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices. (en)
Title	ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation (en)
skos:prefLabel	ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation (en)
skos:notation	RIV/68407700:21230/14:00213904!RIV15-GA0-21230___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP102/12/2108)
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Vobecký, Jan Hazdra, Pavel Záhlava, Vít
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	34605
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/14:00213904
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon carbide; Schottky diode; Devie simulation; Calibration; Irradiation (en)
http://linked.open.../riv/klicoveSlovo	Silicon carbide Irradiation Schottky diode Devie simulation Calibration
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[06767FAC2A11]
http://linked.open...i/riv/nazevZdroje	Solid-State Electronics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	94
http://linked.open...iv/tvurceVysledku	Hazdra, Pavel Vobecký, Jan Záhlava, Vít Berthou, M. Mihaila, A.
http://linked.open...ain/vavai/riv/wos	000334097000008
issn	0038-1101
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.sse.2014.02.004
http://localhost/t...ganizacniJednotka	21230

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