About: An Improved Model of High-Voltage Power LDMOSFET and Its Usage in Multi-Objective Optimization of Radio-Frequency Amplifiers

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Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6626472
Description	In the paper, a set of improvements of the semiempirical MOSFET model is suggested to ensure required accuracy for simulating power electronic circuits. The enhancement of the precision was arranged by incorporating the more accurate Grove-Frohman equations into the semiempirical model because the contemporary short-channel-oriented models BSIM and EKV are inappropriate for characterizing the power transistors. The ability of the modified model to characterize power devices was confirmed by successful processes of extracting its parameters for medium- and high-power transistors, and a demonstration of this process for an SIPMOS power transistor is also shown in the paper. Finally, a multi-objective optimization of a C-class radio-frequency power amplifier with LDMOSFET is demonstrated as well as an analogous procedure for a low-noise preamplifier. In the two examples in time and frequency domains, resulting three- and two-dimensional Pareto fronts are presented in convenient graphic forms for a comfortable selection of a tradeoff by a user. In the paper, a set of improvements of the semiempirical MOSFET model is suggested to ensure required accuracy for simulating power electronic circuits. The enhancement of the precision was arranged by incorporating the more accurate Grove-Frohman equations into the semiempirical model because the contemporary short-channel-oriented models BSIM and EKV are inappropriate for characterizing the power transistors. The ability of the modified model to characterize power devices was confirmed by successful processes of extracting its parameters for medium- and high-power transistors, and a demonstration of this process for an SIPMOS power transistor is also shown in the paper. Finally, a multi-objective optimization of a C-class radio-frequency power amplifier with LDMOSFET is demonstrated as well as an analogous procedure for a low-noise preamplifier. In the two examples in time and frequency domains, resulting three- and two-dimensional Pareto fronts are presented in convenient graphic forms for a comfortable selection of a tradeoff by a user. (en)
Title	An Improved Model of High-Voltage Power LDMOSFET and Its Usage in Multi-Objective Optimization of Radio-Frequency Amplifiers An Improved Model of High-Voltage Power LDMOSFET and Its Usage in Multi-Objective Optimization of Radio-Frequency Amplifiers (en)
skos:prefLabel	An Improved Model of High-Voltage Power LDMOSFET and Its Usage in Multi-Objective Optimization of Radio-Frequency Amplifiers An Improved Model of High-Voltage Power LDMOSFET and Its Usage in Multi-Objective Optimization of Radio-Frequency Amplifiers (en)
skos:notation	RIV/68407700:21230/13:00209339!RIV15-MSM-21230___
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(GAP102/10/1665), P(TE01020186), S
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Černý, David Dobeš, Josef Banáš, Stanislav Paňko, Václav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	60368
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/13:00209339
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Power devices; SIPMOS power transistor; LDMOSFET; device characterization; parameter extraction; C-class amplifier; low-noise preamplifier; radio frequency; multi-objective optimization; goal attainment method; Pareto front (en)
http://linked.open.../riv/klicoveSlovo	Pareto front C-class amplifier LDMOSFET Power devices SIPMOS power transistor radio frequency multi-objective optimization parameter extraction low-noise preamplifier goal attainment method device characterization
http://linked.open...ontrolniKodProRIV	[494EFFD8E679]
http://linked.open...v/mistoKonaniAkce	Salt Lake City
http://linked.open...i/riv/mistoVydani	Piscataway
http://linked.open...i/riv/nazevZdroje	The 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL)
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Integrated Satellite and Terrestrial Navigation Technologies Centre Symbolic and Semisymbolic Methods for Power and Mechatronic Applications
http://linked.open...UplatneniVysledku	2013
http://linked.open...iv/tvurceVysledku	Dobeš, Josef Černý, David Banáš, Stanislav Paňko, Václav
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000345762700081
http://linked.open.../riv/zahajeniAkce	2013-06-23 (xsd:date)
issn	2151-0997
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/COMPEL.2013.6626472
http://purl.org/ne...btex#hasPublisher	IEEE
https://schema.org/isbn	978-1-4673-4916-1
http://localhost/t...ganizacniJednotka	21230

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