About: Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation     Goto   Sponge   NotDistinct   Permalink

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  • Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements.
  • Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements. (en)
Title
  • Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation
  • Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation (en)
skos:prefLabel
  • Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation
  • Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation (en)
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  • RIV/68407700:21230/13:00201109!RIV14-GA0-21230___
http://linked.open...avai/riv/aktivita
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  • P(GAP102/12/2108)
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  • 101319
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  • RIV/68407700:21230/13:00201109
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  • silicon carbide; radiation defects; protons; alpha-particles (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [CDEA6A4628CB]
http://linked.open...v/mistoKonaniAkce
  • Saint- Petersburg
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  • Zürich
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  • Silicon Carbide and Related Materials 2012
http://linked.open...in/vavai/riv/obor
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  • Hazdra, Pavel
  • Vobecký, Jan
  • Záhlava, Vít
  • Berthou, M.
  • Mihaila, A.
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000319785500157
http://linked.open.../riv/zahajeniAkce
issn
  • 0255-5476
number of pages
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  • 10.4028/www.scientific.net/MSF.740-742.661
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  • Transtech Publications
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  • 978-3-03785-624-6
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  • 21230
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