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  • High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 - 800 oC. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 oC. The evidence was provided by depth profiling (DLTS). The effect of the RED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices.
  • High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 - 800 oC. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 oC. The evidence was provided by depth profiling (DLTS). The effect of the RED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices. (en)
Title
  • Radiation Enhanced Diffusion of Nickel in Silicon Diodes
  • Radiation Enhanced Diffusion of Nickel in Silicon Diodes (en)
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  • Radiation Enhanced Diffusion of Nickel in Silicon Diodes
  • Radiation Enhanced Diffusion of Nickel in Silicon Diodes (en)
skos:notation
  • RIV/68407700:21230/12:00194609!RIV13-MSM-21230___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6840770017)
http://linked.open...vai/riv/dodaniDat
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  • 163918
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  • RIV/68407700:21230/12:00194609
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Diode; nickel; diffusion (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [AF856EADF771]
http://linked.open...v/mistoKonaniAkce
  • Praha
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  • Praha
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  • ISPS'12 PROCEEDINGS
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http://linked.open...UplatneniVysledku
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  • Hazdra, Pavel
  • Vobecký, Jan
  • Záhlava, Vít
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • České vysoké učení technické v Praze
https://schema.org/isbn
  • 978-80-01-05100-9
http://localhost/t...ganizacniJednotka
  • 21230
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