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rdf:type
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Description
| - Novel two HEMT models are suggested in the paper with improved accuracy of higher-order derivatives, which is very important for modeling radio-frequency devices as mixers, etc. The proposed modifications of the models are based on empirical relations for the transconductance dependence on gate-source voltage. Moreover, a way is suggested how to extract the model parameters of various nonlinear HEMT models from a measured multibias s-parameter data set. The proposed extraction procedure is based on a three-step identification procedure that uses robust optimization methods. Finally, various HEMT models -- including the proposed ones -- are compared in terms of the root-mean-square error of DC characteristics and multibias s-parameters.
- Novel two HEMT models are suggested in the paper with improved accuracy of higher-order derivatives, which is very important for modeling radio-frequency devices as mixers, etc. The proposed modifications of the models are based on empirical relations for the transconductance dependence on gate-source voltage. Moreover, a way is suggested how to extract the model parameters of various nonlinear HEMT models from a measured multibias s-parameter data set. The proposed extraction procedure is based on a three-step identification procedure that uses robust optimization methods. Finally, various HEMT models -- including the proposed ones -- are compared in terms of the root-mean-square error of DC characteristics and multibias s-parameters. (en)
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Title
| - Novel HEMT Models with Improved Higher-Order Derivatives and Extracting Their Parameters Using Multibias S-Parameters
- Novel HEMT Models with Improved Higher-Order Derivatives and Extracting Their Parameters Using Multibias S-Parameters (en)
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skos:prefLabel
| - Novel HEMT Models with Improved Higher-Order Derivatives and Extracting Their Parameters Using Multibias S-Parameters
- Novel HEMT Models with Improved Higher-Order Derivatives and Extracting Their Parameters Using Multibias S-Parameters (en)
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skos:notation
| - RIV/68407700:21230/11:00184433!RIV12-MSM-21230___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GAP102/10/1614), Z(MSM6840770014)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21230/11:00184433
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - HEMTs; Integrated circuit modeling; Mathematical model; Scattering parameters; Solid modeling (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
| - Waikoloa Village, Big Island, Hawaii
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - 2011 IEEE Compound Semiconductor Integrated Circuit Symposium
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1109/CSICS.2011.6062468
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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