About: Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

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About: Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.scientific.net/SSP.178-179.398
Description	Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC. Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC. (en)
Title	Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon (en)
skos:prefLabel	Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon (en)
skos:notation	RIV/68407700:21230/11:00183039!RIV12-MSM-21230___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LC06041), Z(MSM6840770017)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Vobecký, Jan Hazdra, Pavel Záhlava, Vít Komarnitskyy, Volodymyr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	210042
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/11:00183039
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Diffusion; radiation enhanced diffusion; platinum; palladium; chromium; molybdenum; nickel; vanadium; ion implantation; helium; carrier lifetime; power devices (en)
http://linked.open.../riv/klicoveSlovo	chromium carrier lifetime helium power devices radiation enhanced diffusion nickel palladium platinum Diffusion vanadium molybdenum ion implantation
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[226A9798C8B9]
http://linked.open...i/riv/nazevZdroje	Solid State Phenomena
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by energetic radiation.
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	178-179
http://linked.open...iv/tvurceVysledku	Hazdra, Pavel Vobecký, Jan Komarnitskyy, Volodymyr Záhlava, Vít
http://linked.open...n/vavai/riv/zamer	Rozvoj, spolehlivost a bezpečnost elektroenergetických systémů
issn	1012-0394
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.4028/www.scientific.net/SSP.178-179.398
http://localhost/t...ganizacniJednotka	21230

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