About: Design and Technology of High-Power Silicon Devices

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.mixdes.org/
Description	Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, the low-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands. Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, the low-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands. (en)
Title	Design and Technology of High-Power Silicon Devices Design and Technology of High-Power Silicon Devices (en)
skos:prefLabel	Design and Technology of High-Power Silicon Devices Design and Technology of High-Power Silicon Devices (en)
skos:notation	RIV/68407700:21230/11:00182234!RIV12-MSM-21230___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM6840770017)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Vobecký, Jan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	193513
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/11:00182234
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Power semiconductor devices; silicon; diode; transistor; thyristor (en)
http://linked.open.../riv/klicoveSlovo	diode silicon transistor Power semiconductor devices thyristor
http://linked.open...ontrolniKodProRIV	[133021305E4C]
http://linked.open...v/mistoKonaniAkce	Gliwice
http://linked.open...i/riv/mistoVydani	Lodz
http://linked.open...i/riv/nazevZdroje	2011 Proceedings of the 18th International Conference
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Vobecký, Jan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2011-06-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Rozvoj, spolehlivost a bezpečnost elektroenergetických systémů
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Technical University of Lodz
https://schema.org/isbn	978-83-932075-1-0
http://localhost/t...ganizacniJednotka	21230

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