About: Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In the paper, a method is suggested for modeling miscellaneous RF semiconductor devices by exclusive neural networks or by corrective neural networks working attached to a modified analytic model. An accuracy of the proposed modification of the analytic model is assessed by extracting model parameters of the AlGaAs/InGaAs/GaAs pHEMT. An accuracy of procedures with neural networks is generally assessed by extracting their parameters in static and dynamic domains. An approximation of the AlGaAs/InGaAs/GaAs pHEMT output characteristics is carried out by means of both exclusive and corrective artificial neural networks. A systematic sequence of analyses is also performed for examining an optimal structure of the artificial neural network from the point of view its structure and complexity. The tests have been performed on both five- and four-layer artificial neural networks that serve for modeling a P-channel JFET and for the AlGaAs/InGaAs/GaAs pHEMT. In the paper, a method is suggested for modeling miscellaneous RF semiconductor devices by exclusive neural networks or by corrective neural networks working attached to a modified analytic model. An accuracy of the proposed modification of the analytic model is assessed by extracting model parameters of the AlGaAs/InGaAs/GaAs pHEMT. An accuracy of procedures with neural networks is generally assessed by extracting their parameters in static and dynamic domains. An approximation of the AlGaAs/InGaAs/GaAs pHEMT output characteristics is carried out by means of both exclusive and corrective artificial neural networks. A systematic sequence of analyses is also performed for examining an optimal structure of the artificial neural network from the point of view its structure and complexity. The tests have been performed on both five- and four-layer artificial neural networks that serve for modeling a P-channel JFET and for the AlGaAs/InGaAs/GaAs pHEMT. (en)
Title	Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices (en)
skos:prefLabel	Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices (en)
skos:notation	RIV/68407700:21230/10:00171283!RIV11-GA0-21230___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GAP102/10/1614), Z(MSM6840770014)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Pospíšil, Ladislav Dobeš, Josef Paňko, Václav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	286782
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/10:00171283
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	aluminium compounds; gallium arsenide; indium compounds; junction gate field effect transistors; neural chips; power HEMT (en)
http://linked.open.../riv/klicoveSlovo	aluminium compounds indium compounds gallium arsenide junction gate field effect transistors neural chips power HEMT
http://linked.open...ontrolniKodProRIV	[2420BC6E6C63]
http://linked.open...v/mistoKonaniAkce	Seattle, Washington
http://linked.open...i/riv/mistoVydani	Piscataway
http://linked.open...i/riv/nazevZdroje	Proceedings of the 53rd IEEE International Midwest Symposium on Circuits and Systems
http://linked.open...in/vavai/riv/obor	IN
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Memristive, memcapacitative, and meminductive systems: basic research, modeling, and simulation
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Dobeš, Josef Pospíšil, Ladislav Paňko, Václav
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000287099800290
http://linked.open.../riv/zahajeniAkce	2010-08-01 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Výzkum perspektivních informačních a komunikačních technologií
issn	1548-3746
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE
https://schema.org/isbn	978-1-4244-7773-9
http://localhost/t...ganizacniJednotka	21230

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