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rdf:type
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Description
| - The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm.
- The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm. (en)
- Článek popisuje vlastnosti vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů vyrobených pomocí magnetonového naprašování. (cs)
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Title
| - Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement
- Studium vlastností vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů pomocí měření transmisních spekter (cs)
- Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement (en)
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skos:prefLabel
| - Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement
- Studium vlastností vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů pomocí měření transmisních spekter (cs)
- Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement (en)
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skos:notation
| - RIV/68407700:21230/08:03148580!RIV09-MSM-21230___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/06/0424), Z(MSM6840770014)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21230/08:03148580
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Erbium, Ytterbium; Gallium nitride; Transmittance, Photoluminescence (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Proceedings of SPIE Photonics, Devices, and Systems IV - Volume 7138
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Jeřábek, Vítězslav
- Prajzler, Václav
- Oswald, Jiří
- Peřina, V.
- Špirková, Jarmila
- Hüttel, Ivan
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://purl.org/ne...btex#hasPublisher
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http://localhost/t...ganizacniJednotka
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