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  • Non-uniform distribution of carrier lifetime over the area of power bipolar semiconductor devices results in a non-uniform distribution of on-state current density and switching loses. Consequently, it results in non-uniform temperature distribution which can negatively influence the device reliability. Several methods can be used for measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes. Advantages and disadvantages of individual methods and an optimum area of applications are discussed in this paper. This paper is mostly oriented on a possibility to use LBIC method for measuring carrier lifetime distribution in the bulk of high voltage large area devices, especially N+NPP+ diode structures.
  • Non-uniform distribution of carrier lifetime over the area of power bipolar semiconductor devices results in a non-uniform distribution of on-state current density and switching loses. Consequently, it results in non-uniform temperature distribution which can negatively influence the device reliability. Several methods can be used for measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes. Advantages and disadvantages of individual methods and an optimum area of applications are discussed in this paper. This paper is mostly oriented on a possibility to use LBIC method for measuring carrier lifetime distribution in the bulk of high voltage large area devices, especially N+NPP+ diode structures. (en)
  • Nehomogenní rozložení doby života nosičů ve strukturách výkonových polovodičových součástek nepříznivě ovlivňuje paranetry součástek a může nepříznivě ovlivnit jejich spolehlivost. V článku jsou diskutovány možnosti různých metod stanovení rozložení doby života nosičů, jejicj výhody i nevýhody. Podrobně je diskutována možnost použití metoda LBIC pro měření rozložení doby života nosičů v objemu vysokonapěťových součástek, zejména N+NPNP+ diod (cs)
Title
  • Monitoring of carrier lifetime distribution in high power semiconductor device technology
  • Monitoring of carrier lifetime distribution in high power semiconductor device technology (en)
  • Monitorování rozložení doby života nosičů v technologii výkonových polovodičových součástek (cs)
skos:prefLabel
  • Monitoring of carrier lifetime distribution in high power semiconductor device technology
  • Monitoring of carrier lifetime distribution in high power semiconductor device technology (en)
  • Monitorování rozložení doby života nosičů v technologii výkonových polovodičových součástek (cs)
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  • RIV/68407700:21230/08:03147139!RIV09-MSM-21230___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6840770017)
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 380444
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21230/08:03147139
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • LBIC method; carrier lifetime; diagnostics; homogeneity; power semiconductor devices (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [C8883190D6B8]
http://linked.open...i/riv/nazevZdroje
  • Microelectronics Journal
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 39
http://linked.open...iv/tvurceVysledku
  • Macháček, Zdeněk
  • Benda, Vítězslav
  • Kožíšek, Jan
http://linked.open...ain/vavai/riv/wos
  • 000256982500006
http://linked.open...n/vavai/riv/zamer
issn
  • 0026-2692
number of pages
http://localhost/t...ganizacniJednotka
  • 21230
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