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Description
| - In this contribution the effects of the substrate on the mechanical properties of amorphous silicon carbon (a-SiC) thin films were investigated. Coatings of thickness approximately 2 μm were prepared by plasma enhanced chemical vapor deposition (PECVD) technique on three various metal substrates (AISI M2, AISI L2 and TiAl6V4). The a-SiC layers were prepared by vapor decomposition of liquid Hexamethyldisiloxane (HMDSO) diluted and mixed by mixture of argon and methane. We studied deposition rate as function flow of HMDSO, adhesive properties of coatings, coefficient of friction and running of hardness by cyclic nanoindentation test. The results showed that vapors of HMDSO causes the highest deposition rate of film (35 nm/min) at flow 1 g/h. Further, the substrate AISI M2 (hardened tool steel) caused better mechanical properties of a-SiC coating than others studied substrates.
- In this contribution the effects of the substrate on the mechanical properties of amorphous silicon carbon (a-SiC) thin films were investigated. Coatings of thickness approximately 2 μm were prepared by plasma enhanced chemical vapor deposition (PECVD) technique on three various metal substrates (AISI M2, AISI L2 and TiAl6V4). The a-SiC layers were prepared by vapor decomposition of liquid Hexamethyldisiloxane (HMDSO) diluted and mixed by mixture of argon and methane. We studied deposition rate as function flow of HMDSO, adhesive properties of coatings, coefficient of friction and running of hardness by cyclic nanoindentation test. The results showed that vapors of HMDSO causes the highest deposition rate of film (35 nm/min) at flow 1 g/h. Further, the substrate AISI M2 (hardened tool steel) caused better mechanical properties of a-SiC coating than others studied substrates. (en)
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Title
| - a-SiC Thin Film Prepared by PECVD Technique
- a-SiC Thin Film Prepared by PECVD Technique (en)
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skos:prefLabel
| - a-SiC Thin Film Prepared by PECVD Technique
- a-SiC Thin Film Prepared by PECVD Technique (en)
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skos:notation
| - RIV/68407700:21220/12:00199833!RIV13-MSM-21220___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21220/12:00199833
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - deposition rate; adhesion; nanoindentation; PECVD (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Štěpánek, I.
- Budinská, Zuzana
- Tischler, Daniel
- Burešová, Antonie
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http://localhost/t...ganizacniJednotka
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