About: GaAs Detectors with PN Junctions

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The motivation for the research is in forming functional detectors of ionising particles on GaAs. The technology is based on high purity high resistivity (more then 107 Ohmcm) N type SI (SemiInsulating) GaAs substrate to form PIN structure. Recently we studied the technology using the Zn diffusion to form contact regions, now we have prepared the P+ and N+ regions using MOCVD process. Results (IV, Spectroscopy of alphas and gammas) are described. The motivation for the research is in forming functional detectors of ionising particles on GaAs. The technology is based on high purity high resistivity (more then 107 Ohmcm) N type SI (SemiInsulating) GaAs substrate to form PIN structure. Recently we studied the technology using the Zn diffusion to form contact regions, now we have prepared the P+ and N+ regions using MOCVD process. Results (IV, Spectroscopy of alphas and gammas) are described. (en) Vytvoření funkčních detektorů ionisujících částic na GaAs. Technologie založená na semiizolačním N typu GaAs s MOCVD technikou připravenými vrstvami P+ a N+ k získání struktury PIN. Příspěvek popisuje technologii a výsledky měření (IV křivky a spektroskopickou odezvu pro alfa a gama částice). (cs)
Title	GaAs Detectors with PN Junctions GaAs Detectors with PN Junctions (en) GaAs detektory s PN přechody (cs)
skos:prefLabel	GaAs Detectors with PN Junctions GaAs Detectors with PN Junctions (en) GaAs detektory s PN přechody (cs)
skos:notation	RIV/68407700:21220/04:02104546!RIV07-MSM-21220___
http://linked.open.../vavai/riv/strany	100 ; 103
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(1P04LA211), Z(MSM 210000018)
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Chren, Dominik Horažďovský, Tomáš Kohout, Zdeněk Sopko, Bruno Pospíšil, Stanislav Solar, Michael Linhart, Vladimír
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta strojní
http://linked.open...dnocenehoVysledku	565137
http://linked.open...ai/riv/idVysledku	RIV/68407700:21220/04:02104546
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaAs; MOCVD epitaxy; New materials; alpha and gamma response; detectors of ionising particles (en)
http://linked.open.../riv/klicoveSlovo	MOCVD epitaxy alpha and gamma response detectors of ionising particles GaAs New materials
http://linked.open...ontrolniKodProRIV	[8D1CB503AACD]
http://linked.open...v/mistoKonaniAkce	Časta Píla
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	Proceedings of the 10th International Workshop on Applied Physics of Condensed Matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	7 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...vavai/riv/projekt	Collaboration of the Czech Republic with CERN
http://linked.open...UplatneniVysledku	2004
http://linked.open...iv/tvurceVysledku	Chren, Dominik Hulicius, Eduard Kohout, Zdeněk Pospíšil, Stanislav Sopko, Bruno Jurka, V. Horažďovský, Tomáš Linhart, Vladimír Solar, Michael Pangrác, J.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2004-06-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20210000018
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Slovenská technická univerzita v Bratislave. Fakulta elektrotechniky a informatiky
https://schema.org/isbn	80-227-2073-9
http://localhost/t...ganizacniJednotka	21220

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