About: Si-related color centers in nanocrystalline diamond thin films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The successful growth of nanocrystalline diamond (NCD) thin films with optically active Si-related color centers was realized on glass and molybdenum substrates by the microwave plasma chemical vapor deposition (CVD) with focused or linear antenna plasma reactors. Diamond coatings were characterized by Raman spectroscopy, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Increased of a-Si interlayer thickness resulted in reduction of stress in NCD film and increased renucleation ofNCD films. The PL spectra showed that the Si-color center is only observed in the focused plasma system. The influence of the substrate material as well as the a-Si interlayer on the density of Si-related color center was not confirmed in our setup. The successful growth of nanocrystalline diamond (NCD) thin films with optically active Si-related color centers was realized on glass and molybdenum substrates by the microwave plasma chemical vapor deposition (CVD) with focused or linear antenna plasma reactors. Diamond coatings were characterized by Raman spectroscopy, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Increased of a-Si interlayer thickness resulted in reduction of stress in NCD film and increased renucleation ofNCD films. The PL spectra showed that the Si-color center is only observed in the focused plasma system. The influence of the substrate material as well as the a-Si interlayer on the density of Si-related color center was not confirmed in our setup. (en)
Title	Si-related color centers in nanocrystalline diamond thin films Si-related color centers in nanocrystalline diamond thin films (en)
skos:prefLabel	Si-related color centers in nanocrystalline diamond thin films Si-related color centers in nanocrystalline diamond thin films (en)
skos:notation	RIV/68378271:_____/14:00439267!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA14-04790S), P(LH12186), P(TA01011740)
http://linked.open...iv/cisloPeriodika	12
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Müller, Martin Remeš, Zdeněk Kromka, Alexander Holovský, Jakub Potocký, Štěpán Kočka, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	45105
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/14:00439267
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	chemical vapor deposition; color center; diamond; photoluminescence; plasma (en)
http://linked.open.../riv/klicoveSlovo	color center photoluminescence plasma diamond chemical vapor deposition
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[2376B37A394A]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi B-Basic Solid State Physics
http://linked.open...in/vavai/riv/obor	BL
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Mechanism of energy and charge transfer in semiconductor nanostructures Engineering Bulk and Surface of Diamond Nano-Objects for Biomedicine Hybrid high-density low-temperature microwave plasma sources in matrix configuration suitable for growth of advanced materials and their (nano) composites on 2D and 3D substrates
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	251
http://linked.open...iv/tvurceVysledku	Kromka, Alexander Remeš, Zdeněk Holovský, Jakub Potocký, Štěpán Kočka, Jan Müller, Martin
http://linked.open...ain/vavai/riv/wos	000345830900047
issn	0370-1972
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/pssb.201451177

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