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Description
  • Correlated microscopic characterization by AFM topography, phase and local current imaging with Raman micro-mapping of graphene layers prepared by plasma and thermal CVD techniques reveals different types of defects in the layers and provides explanation for orders of magnitude different electrical conductivities.
  • Correlated microscopic characterization by AFM topography, phase and local current imaging with Raman micro-mapping of graphene layers prepared by plasma and thermal CVD techniques reveals different types of defects in the layers and provides explanation for orders of magnitude different electrical conductivities. (en)
Title
  • Microscopically inhomogeneous electronic and material properties arising during thermal and plasma CVD of graphene
  • Microscopically inhomogeneous electronic and material properties arising during thermal and plasma CVD of graphene (en)
skos:prefLabel
  • Microscopically inhomogeneous electronic and material properties arising during thermal and plasma CVD of graphene
  • Microscopically inhomogeneous electronic and material properties arising during thermal and plasma CVD of graphene (en)
skos:notation
  • RIV/68378271:_____/14:00436442!RIV15-GA0-68378271
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  • I, P(GA14-15357S), P(GAP108/12/0996)
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  • 42
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  • 29225
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  • RIV/68378271:_____/14:00436442
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  • graphene; Raman micro-mapping; atomic force microscopy; AFM phase imaging; current-sensing AFM (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [A3A27E53378A]
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  • Journal of Materials Chemistry C
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  • 2
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  • Rezek, Bohuslav
  • Ledinský, Martin
  • Čermák, Jan
  • Yamada, T.
  • Hasegawa, M.
http://linked.open...ain/vavai/riv/wos
  • 000343755800014
issn
  • 2050-7526
number of pages
http://bibframe.org/vocab/doi
  • 10.1039/C4TC01818D
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