About: Modelling of SVCS PIN PECVD reactors for silicon solar cells

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In the silicon solar cells manufacturing process, plasma-enhanced chemical vapour depositions are used for the preparation of passivation and anti-reflection coatings. One of the most important requirements is to achieve a good homogeneity of the surface film both on the wafer and among the wafers in the whole load. In this contribution the optimization of process parameters aimed at achieving a good homogeneity by numerical modelling is illustrated. The modelling includes separately a part devoted to the plasma-chemical kinetics and the computational fluid dynamics describing a laminar fluid flow (Navier-Stokes equations), mass and energy balance. The positive effect of helium dilution on the homogeneity of prepared SiOX films was explained. The calculated results of plasma parameters for SiXNY deposition are compared with the SiOX deposition and the effect of process pressure is discussed. In the silicon solar cells manufacturing process, plasma-enhanced chemical vapour depositions are used for the preparation of passivation and anti-reflection coatings. One of the most important requirements is to achieve a good homogeneity of the surface film both on the wafer and among the wafers in the whole load. In this contribution the optimization of process parameters aimed at achieving a good homogeneity by numerical modelling is illustrated. The modelling includes separately a part devoted to the plasma-chemical kinetics and the computational fluid dynamics describing a laminar fluid flow (Navier-Stokes equations), mass and energy balance. The positive effect of helium dilution on the homogeneity of prepared SiOX films was explained. The calculated results of plasma parameters for SiXNY deposition are compared with the SiOX deposition and the effect of process pressure is discussed. (en)
Title	Modelling of SVCS PIN PECVD reactors for silicon solar cells Modelling of SVCS PIN PECVD reactors for silicon solar cells (en)
skos:prefLabel	Modelling of SVCS PIN PECVD reactors for silicon solar cells Modelling of SVCS PIN PECVD reactors for silicon solar cells (en)
skos:notation	RIV/68378271:_____/14:00434336!RIV15-TA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(TA01020972)
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Potocký, Štěpán Jirásek, Vít
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	29916
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/14:00434336
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	PECVD; simulation; solar cells; homogeneity (en)
http://linked.open.../riv/klicoveSlovo	PECVD simulation solar cells homogeneity
http://linked.open...ontrolniKodProRIV	[2C23E187EF64]
http://linked.open...v/mistoKonaniAkce	Štrbské Pleso
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	Material analysis in vacuum
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Modification of the particular technology facilities of the batch processes for the yield enhancement of the highly efficient silicon solar cells using the numerical and physical pre- and post-processing models CFD-ACE+ and Flow Simulation.
http://linked.open...UplatneniVysledku	2014
http://linked.open...iv/tvurceVysledku	Potocký, Štěpán Jirásek, Vít Poruba, A.
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2014-10-02 (xsd:date)
number of pages	7 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Slovenská vákuová spoločnosť
https://schema.org/isbn	978-80-971179-4-8

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