About: InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

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About: InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	InGaN/GaN multiple quantum well (MQW) structure was prepared MOVPE and characterized by fine XRD measurements. Suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scaleswas demonstrated. The photoluminescent and radioluminescent spectra were measured. the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. InGaN/GaN multiple quantum well (MQW) structure was prepared MOVPE and characterized by fine XRD measurements. Suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scaleswas demonstrated. The photoluminescent and radioluminescent spectra were measured. the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. (en)
Title	InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study (en)
skos:prefLabel	InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study (en)
skos:notation	RIV/68378271:_____/14:00433511!RIV15-TA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(LM2011026), P(TA01011017)
http://linked.open...iv/cisloPeriodika	45
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Hulicius, Eduard Beitlerová, Alena Pacherová, Oliva Nikl, Martin Oswald, Jiří Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	21836
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/14:00433511
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	III-nitrides; scintilator; radioluminescence (en)
http://linked.open.../riv/klicoveSlovo	radioluminescence III-nitrides scintilator
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[A6F7217B4204]
http://linked.open...i/riv/nazevZdroje	Nanotechnology
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...vavai/riv/projekt	New Single Crystal Materials Prepared with EFG Technology and Their Hi-tech Applications Laboratory of nanstructures and nanomaterials
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	25
http://linked.open...iv/tvurceVysledku	Beitlerová, Alena Hulicius, Eduard Nikl, Martin Pánek, D. Pacherová, Oliva Hospodková, Alice Oswald, Jiří Brůža, P. Foltynski, B. Heuken, M.
http://linked.open...ain/vavai/riv/wos	000344167700010
issn	0957-4484
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1088/0957-4484/25/45/455501

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