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Description
| - We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200–290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively.
- We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200–290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively. (en)
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Title
| - Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen
- Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen (en)
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skos:prefLabel
| - Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen
- Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen (en)
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skos:notation
| - RIV/68378271:_____/14:00432629!RIV15-GA0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - I, P(GAP204/12/0805), P(LM2011029)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/14:00432629
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - ESR; yttrium orthosilicates; ESEEM; charge traps; F+ centers (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - McClellan, K. J.
- Nikl, Martin
- Stanek, C. R.
- Hybler, Jiří
- Laguta, Valentyn
- Rosa, Jan
- Zazubovich, S.
- Kärner, T.
- Savchenko, Dariia
- Buryi, Maksym
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1103/PhysRevB.90.064104
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