About: Synthesis of graphene on Co/SiC structure

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the results of Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co with SiC has been observed, forming two different phases on the surface. Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the results of Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co with SiC has been observed, forming two different phases on the surface. (en)
Title	Synthesis of graphene on Co/SiC structure Synthesis of graphene on Co/SiC structure (en)
skos:prefLabel	Synthesis of graphene on Co/SiC structure Synthesis of graphene on Co/SiC structure (en)
skos:notation	RIV/68378271:_____/13:00436933!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP108/11/0894)
http://linked.open...iv/cisloPeriodika	10
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Jurka, Vlastimil
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	109533
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/13:00436933
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	chemical-vapor-deposition; thin graphite films; few-layer graphene; silicon-carbide; raman-spectroscopy; carbon; surfaces (en)
http://linked.open.../riv/klicoveSlovo	raman-spectroscopy chemical-vapor-deposition few-layer graphene silicon-carbide thin graphite films surfaces carbon
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[4D3ED30C8083]
http://linked.open...i/riv/nazevZdroje	Journal of Materials Science-Materials in Electronics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	24
http://linked.open...iv/tvurceVysledku	Jurka, Vlastimil Fidler, T. Cichoň, S. Macháč, P.
http://linked.open...ain/vavai/riv/wos	000324325800027
issn	0957-4522
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s10854-013-1320-1

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